Chalcogenide Photovoltaics by Roland Scheer

By Roland Scheer

This primary complete description of an important fabric homes and equipment features closes the space among common books on sun cells and magazine articles on chalcogenide-based photovoltaics.Written by way of very popular authors with years of functional event within the box, the publication covers II-VI and I-III-VI2 fabrics in addition to strength conversion at heterojunctions. It additionally discusses the most recent semiconductor heterojunction types and offers glossy research options. skinny movie expertise is defined with an emphasis on present and destiny options for mass creation, and the booklet closes with a compendium of failure research in photovoltaic skinny movie modules.With its evaluation of the semiconductor physics and expertise wanted, this useful booklet is perfect for college kids, researchers, and brands, in addition to for the starting to be variety of engineers and researchers operating in businesses and institutes on chalcogenide photovoltaics.

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6a the inversion is not complete since the condition ND,b > NA,a is not fulfilled. Although in equilibrium electrons are still majority carriers at the absorber surface, this will change for small electric forward bias. The volume charge within the window layer is high but restricted to a small region. As a result, the potential drop in the window layer can be neglected [which was conditional for Eq. 31)]. The small offsets of the electric field at the buffer/window and buffer/absorber interfaces are due to differences in the dielectric constant.

Vice versa, a positive charge resembles a higher buffer donor concentration. It increases Ep,az=0 and reinforces the inversion. Ep,az=0 values calculated after Eq. 35) follow the simulated data points as long as the condition ND,b ≤ NA,a is fulfilled. Also the charge at the buffer/window interface can influence the band diagram. 10, we plot simulated values of Ep,az=0 as a function of negatively and positively charged interface state densities. 7 but with (a) negative charge density −qNIF at the buffer/window interface and (b) positive charge density +qNIF .

And finally, there is a convention to denote different types of heterojunctions. If both band extrema (valence band maximum and conduction band minimum) are located in one semiconductor, this interface is referred to as a type I interface. 3 this is the case for the buffer/absorber interface. 3. 15 16 2 Thin Film Heterostructures Here the valence band maximum is in one semiconductor and the conduction band minimum is in the other. The band line up is a property of the two semiconductors forming an interface.

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