Chemical Vapor Deposition for Microelectronics: Principles, by Arthur Sherman

By Arthur Sherman

Provides an in depth, complete research of chemical vapor deposition (CVD). realizing CVD calls for wisdom of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics in addition to homogenous and heterogeneous chemical reactions. this article provides those features of CVD in an built-in type, and in addition stories motion pictures to be used in built-in circuit expertise.

Show description

Read Online or Download Chemical Vapor Deposition for Microelectronics: Principles, Technology and Applications (Materials Science and Process Technology) PDF

Similar metallurgy books

Wide-Gap Chalcopyrites

Chalcopyrites, specifically people with a large band hole, are attention-grabbing fabrics when it comes to their technological power within the subsequent new release of thin-film sun cells and when it comes to their simple fabric homes. They convey uniquely low disorder formation energies, resulting in strange doping and section habit and to tremendous benign grain barriers.

Introduction to physical metallurgy

The most principles and purposes of the metallurgy are supplied during this publication.

Additional resources for Chemical Vapor Deposition for Microelectronics: Principles, Technology and Applications (Materials Science and Process Technology)

Example text

Rhe thermal conductivity, k, tt\e net production rates, Wj, and the Fundamentals of Thermal CVD 25 diffusion coefficients, OJ, are calculated from the initial guess for T and the assumed known solution for the V's. We then solve the quadratic equation for T p at the first interior point. Next, the following point is considered and Ts for it is the just-calculated T p from the first point. In this way, we calculate T at each point up to the upper boundary. Then, with a new estimate of T available, we recalculate k, Wj, and Dj and repeat the procedure.

The reverse rate coefficient is related to the forward one at equilibrium by where K c is equilibrium constant in concentration units. Since we are dealing Fundamentals of Thermal CVD 21 with a quasiequilibrium, we will use this to determine k r . It is simpler to determine it from its pressure units form. The relationship between these forms is, for our case, Patm T K -- (37) P where Patm is atmospheric pressure, and Kp can be obtained from /;,5° 6HO) Kp = exp ( --- ~ R RT (38) where ~So is the change in entropy of the gases in our reaction in going from reactant to products under standard state conditions (atmospheric pressure).

Using a 52 Chemical Vapor Deposition for Microelectronics simpl ified theoretical model of the discharge, the authors derived values for the voltage on each electrode relative to the plasma potential, and could then calculate the voltage ratios from the measured data. It was found that the voltage ratios depended not only on the reactor area ratio, but also on the electrode material, the peak-to-peak voltage across the electrodes, the gas and its pressure. Results are shown in Figure 7 for Argon gas in a stainless steel system at 50 mTorr with a 600 peak-to-peak voltage.

Download PDF sample

Rated 4.01 of 5 – based on 12 votes