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Chen, P. ; Chen, F. ; Tsai, M. J. Proceedings of the IEEE, 2012, 100, 6, 1951 – 1970. Simmons, J. ; Verderbert. R. R. Proc. Roy. Soc. A. 1967, 301, 77 - 102. Zhuang, W. ; Camas, W. ; Ulrich, B. D. Electron Devices Meeting. 2002. IEDM '02. International. 2002, 193-196. Sawa, A. Materials Today. 2008, 11, 28-36. Waser, R. Microelectronic Engineering. 2009, 86, 1925 – 1928. Pringle, J. P. Electrochim. Acta. 1980, 25, 11, 1423–1437. ; Hyunsik, W. ; Hong, P. ; Lee, J. K. Appl. Phys. Lett. 2010, 97, 233509-1 233509-3.
29] Ridley, B. K. J. Appl. Phys. 1975, 46, 998-1004. ; Yamada T. Thin Solid Films. 1993, 236, 27-31.  Carslaw, H. ; Jaeger, J. C. 517. ; Solomon, A. D. 321.  Atkinson, A. Rev. Mod. Phys. 1989, 57, 437-451.  Crank, J. 411.  Allnatt, A. ; Lidiard, A. B. 572.  Bhat B. ; Swalin, R. A. Acta Metall. 1972, 20, 1387-1391.  Shim, M. ; Moore, W. J. J. Chem. , 1957, 26, 802-812.  Kim, M. ; Kim, S. ; Choi, E. J. et al. Jap. J. Appl. Phys. 2005, 44, L1301-L1303. ; Nardi F. Appl.
Wu, T. ; Wang, S. ; Tsai, M. J. Appl. Phys. Lett. 2008, 92, 022110-1-022110-3. ; Choi Y. K. IEEE Trans. Electron Devices, 2009, 56, 12, 3049-3054. Kundozerova, T. ; Grishin, A. ; Stefanovich, G. ; Velichko, A. A. IEEE Trans. Electron Devices. 2012,59, 4, 1144 – 1148. Kundozerova, T. ; Stefanovich, G. ; Grishin, A. M. Phys. Status Solidi C. 2012, 9, 7, 1699-1701. Park, I. ; Kim, K. ; Ahm, J. Jpn. J. Appl. Phys, 2007, 46, 2172 – 2174. Wong, H. ; Lee, H. ; Chen, Y. ; Chen, P. ; Chen, F. ; Tsai, M.